GaN FETs - Nexperia | DigiKey
Trap analysis on Pt-AlGaN/GaN Schottky barrier diode through deep level transient spectroscopy
GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature
GAN041-650WSB Gallium Nitride (GaN) FET - Nexperia | Mouser
Crystals | Free Full-Text | High-Speed GaN-Based Superluminescent Diode for 4.57 Gbps Visible Light Communication
PDF) Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays
Making GaN Power Electronics Universal - Technical Articles
GaN diodes with uniform, robust avalanche - News
Field plate engineering for GaN-based Schottky barrier diodes
Processes | Free Full-Text | Equivalent Circuit Establishments of a GaN High-Electron-Mobility Transistor and 635 nm Laser Diode for a Short-Pulsed Rising Current Simulation
Effect of p-GaN layer on the properties of InGaN/GaN green light-emitting diodes | Journal of Materials Research | Cambridge Core
GaN High Power PIN Diode Switches from Pasternack
The 2023-2028 World Outlook for Gallium Nitride Light-Emitting Diodes (GaN LED) Backlighting: Parker Ph.D., Prof Philip M.: Textbooks: Amazon Canada
GaN Power Devices: Potential, Benefits, and Keys to Successful Use | Mouser
Reflective SP4T GaN High Power PIN Diode Switch Operating from DC to 6 GHz Up to
P-n junction empowers GaN HEMTs - News
Optimization of recess-free AlGaN/GaN Schottky barrier diode by TiN anode and current transport mechanism analysis
Power GaN Products Resources DigiKey | DigiKey
GaN High Power PIN Diode Switches from Pasternack
October 2023 GaN newsletter: Qromis Substrate Technology (QST) for power GaN and RF GaN devices - KnowMade
GaN Systems and Renesas Reduce Automotive DC/DC by 50% - Embedded Computing Design
Chinese team develops Kilovolt GaN diode - News
Reflective SPDT GaN High Power PIN Diode Switch Operating from DC to 12 GHz Up to 25 Watts (+44 dBm), 100ns and SMA
GaN enables efficient, cost-effective 800V EV traction inverters - EDN
GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature
